Semiconductor Physics

Garant předmětu:

Vítězslav Benda

Lecturer:

Vítězslav Benda

Tutor:

Vítězslav Benda

Supervisor:

Department of Electrotechnology

Synopsis:

The aim of the course is to deepen the knowledge of the properties of semiconductor materials and structures that are important for a deeper understanding of the semiconductor components technology .

Requirements:

Basic knowledge of mathematics and physics (including quantum theory)

Syllabus of lectures:

1. Basics of solid state physics

Adiabatic approximation.One-electron approximation.Bloch's Theorem

2. Movement of electron in crystal lattice in external electric and magnetic field

Holes and their basic properties

3. Band structure of the most important semiconductors

Semiconductors with diamond structure

Semiconductors with sphalerite structure

4. Crystal lattice disorders

Crystal lattice oscillations - Phonons. The interaction of phonons with electrons and holes

Localized defects, donors and acceptors

5. Statistics of electrons and holes in semiconductors

Density of states. Free charge carrier concentration

6. Non-degenerate semiconductors, compensated semiconductors, degenerate semiconductors,

Influence of temperature on carrier concentration

7. Transport phenomena in semiconductors. Boltzmann transport equation

Scattering mechanisms.

8. Conductivity of semiconductors, dependence on temperature and concentration of impurities

Hall effect, magnetoresistance. Transport phenomena in the presence of temperature gradient

9. Transport phenomena in strong electric fields

Gunn effect, impact ionization

10. Generation of non-equilibrium charge carriers

Optical generation of non-equilibrium charge carriers

11. Recombination of non-equilibrium carriers

Interband Radiation Recombination, Impact (Auger) Interband Recombination

Recombination through local centers. Surface recombination.

12. Diffusion and drift of non-equilibrium charge carriers

13. Non-homogeneous semiconductors and basic semiconductor structures

Semiconductors with inhomogeneous doping.. PN junction properties

14. Amorphous semiconductors

Syllabus of tutorials:

1. Crystal lattice, types of crystal lattices, symmetry elements

2. Reciprocal crystal lattice, Brilloun zones

3. Band structure of semiconductors - examples

4. Donors and acceptors in semiconductors

5. Calculation of Fermi level

6. Methods of semiconductor conductivity measurement

7. -11. Measurement of semiconductor materials parameters

12. Evaluation of experiments

13. Credit

Study Objective:

To acquire knowledge of semiconductor materials and structures needed for deeper understanding of semiconductor devices

Study materials:

M. Grundmann: The Physics of Semiconductors - An Introduction Including Nanophysics

and Applications, Springer-Verlag Berlin Heidelberg 2010

Y. Yoshida and G. Langouche (editors): Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering, Springer, Japan 2015

Benda V, Gowar J, Grant DA: Power semiconductor devices-theory and applications, Chichester, 1999, John Wiley & Sons.

Note:

Time-table for winter semester 2024/2025:

	06:00–08:0008:00–10:0010:00–12:0012:00–14:0014:00–16:0016:00–18:0018:00–20:0020:00–22:0022:00–24:00
Mon
Tue
Wed
Thu	roomT2:E1-2 Benda V. 16:15–17:45 (lecture parallel1) Dejvice haly Laborator L2roomT2:E1-2 Benda V. 18:00–19:30 (lecture parallel1 parallel nr.1) Dejvice haly Laborator L2
Fri

Time-table for summer semester 2024/2025:

Time-table is not available yet

The course is a part of the following study plans:

• Doctoral studies, daily studies (compulsory elective course)
• Doctoral studies, combined studies (compulsory elective course)
• Doctoral studies, structured daily studies (compulsory elective course)
• Doctoral studies, structured combined studies (compulsory elective course)