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CZECH TECHNICAL UNIVERSITY IN PRAGUE
STUDY PLANS
2024/2025

Advanced Power Semiconductor Devices and ICs

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Code Completion Credits Range Language
XP34APD ZK 4 2P+2C Czech
Garant předmětu:
Jan Vobecký
Lecturer:
Jan Vobecký
Tutor:
Jan Vobecký
Supervisor:
Department of Microelectronics
Synopsis:

Physical and technological structures. Development trends. Parameters and applications. Bipolar structures. MOS structures. BiMOS structures. PN diodes. Schottky diodes. Bipolar transistors. MOS and IGBT transistors. Thyristors (including GTO and MCT). Secondary breakdown, mechanism, safe area. Smart-power devices. High voltage ICs, operation, principles, applications

Requirements:

-

Syllabus of lectures:

1. Physical and technological structures

2. Development trends

3. Parameters and applications

4. Bipolar structures

5. MOS structures

6. BiMOS structures

7. PN diodes

8. Schottky diodes

9. Bipolar transistors

10. MOS and IGBT transistors

11. Thyristors (including GTO and GCT)

12. Secondary breakdown, mechanism, SOA

13. Smart-power devices

14. High voltage ICs, operation, principles, applications

Syllabus of tutorials:

n

Study Objective:
Study materials:

B. J. Baliga, Power Semiconductor Devices, PWS Publishing Company, 2000

Note:
Further information:
https://moodle.fel.cvut.cz/course/view.php?id=3730
Time-table for winter semester 2024/2025:
Time-table is not available yet
Time-table for summer semester 2024/2025:
Time-table is not available yet
The course is a part of the following study plans:
Data valid to 2024-06-16
Aktualizace výše uvedených informací naleznete na adrese https://bilakniha.cvut.cz/en/predmet11433204.html