Semiconductor Structures

Garant předmětu:

Pavel Hazdra

Lecturer:

Pavel Hazdra

Tutor:

Pavel Hazdra

Supervisor:

Department of Microelectronics

Synopsis:

The aim of this course is to provide postgraduate students with a deeper and more detailed insight into principles of and properties of advanced electronic and optoelectronic structures. Completion of this course enables doctoral students to deepen the basic knowledge, which they obtained in the bachelor and master stages of study in the field of semiconductor structures and elements. They will be able to solve scientific tasks in electronics and optoelectronics focused on design, analysis and applications advanced electronic and optoelectronic structures. The student will gain deep knowledge of physics principles of PiN and MOS structures, as these dominate the current integrated and power semiconductor technology. The lecture will be further focused on the use of new principles associated with miniaturization and the use of advanced materials. Higher-order phenomena whose knowledge is essential for understanding the current semiconductor devices will be described. It is expected that the course will focus on specific issues according to the interests and scientific focus of the participants.

Requirements:

Syllabus of lectures:

1. Introduction to semiconductors, semiconductor materials (Si, SiC, GaN, etc.) and their properties.

2. PN junction, thermodynamic equilibrium, forward and reverse polarization, barrier and diffusion capacity,

breakdown mechanisms, temperature phenomena.

3. Metal-semiconductor transition, Schottky and ohmic contacts, forward and reverse characteristics, breakdown and leakage.

4. Hetero-transitions and heterostructures. Quantum structures - quantum pits, wires and dots.

5. Semiconductor diodes. PiN, Schottky and MPS diode, rectifier diodes and fast recovery diodes. Silicon

and SiC diodes.

6. Metal-insulator-semiconductor (MIS) structure: surface states, depletion, accumulation, weak and strong inversion, threshold

voltage, potential well, breakdown mechanisms.

7. MOSFET: structure, principles of operation, ideal and real characteristics, threshold voltage, reverse effect

gates, breakdown voltage and temperature dependence characteristics.

8. MOSFET: high frequency and switching properties, scaling and short channel effects. High-Electron-

Mobility-Transistor (HEMT), advanced MOSFET structures (SOI, FinFET, tense silicon, high-k

dielectrics, etc.).

9. Bipolar transistor (BJT): structure, principles of operation, Ebers-Moll model, Early effect, avalanche breakdown,

characteristics, models. Bipolar transistor with heterotransition (HBT).

10. Power semiconductor structures: MOSFET, IGBT and thyristor - principles, structures, characteristics.

11. JFETs and MESFETs. Transistors using quantum effects: HEMT, SET, etc. Semiconductor memories:

principles, types and applications.

12. Optical properties of semiconductors, light-solid interactions: absorption, emission, stimulated emission, exciton, photocurrent.

13. Light detectors (PN, PiN, APD, MS, quantum effect detectors - principles,

characteristics, parameters, noise), solar cells, CCD structures.

14. Sources of radiation - light-emitting diodes and semiconductor lasers, principles, structures, characteristics, static and dynamic parameters.

Syllabus of tutorials:

Study Objective:

Detailed insight into principles of and properties of advanced electronic and optoelectronic structures.

Study materials:

Note:

Time-table for winter semester 2023/2024:

Time-table is not available yet

Time-table for summer semester 2023/2024:

Time-table is not available yet

The course is a part of the following study plans:

• Doctoral studies, daily studies (compulsory elective course)
• Doctoral studies, combined studies (compulsory elective course)