Advanced Electronic Devices

Course guarantor:

Lecturer:

Tutor:

Supervisor:

Department of Microelectronics

Synopsis:

Energy band engineering. Quantum well, wire, point. 2D electron gas based devices (HEMT, MOD FET). Devices based on resonance double-barrier tunnelling. 3D structures. Quantum device applications (memories, generators, multipliers). Heterogeneous structures. Microwave devices, HBT, Gunn diodes. Microwave device applications. Heterogeneous devices with internal optical coupling. Cryotronic devices. Recording media. IC development trends.

Requirements:

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Syllabus of lectures:

1. Energy band engineering

2. Quantum well, wire, point

3. 2D electron gas based devices (HEMT, MOD FET)

4. Devices based on resonance double-barrier tunnelling

5. 3D structures

6. Quantum device applications (memories, generators, multipliers)

7. Heterogeneous structures

8. Microwave devices, HBT, Gunn diodes

9. Microwave device applications

10. Heterogeneous devices with internal optical coupling

11. Cryotronic devices

12. Recording media

13. IC development trends

14. Discussion

Syllabus of tutorials:

n

Study Objective:

Study materials:

Fahrner, W. R. (ed.): Nanotechnology and Nanoelektronics: Materials,

devices, measurement techniques. Springer, 2004. 269 p. ISBN: 3-540-22452-1

Other: On the recommendation of the lecturer

Note:

Further information:

No time-table has been prepared for this course

The course is a part of the following study plans:

• Doctoral studies, daily studies (compulsory elective course)
• Doctoral studies, combined studies (compulsory elective course)
• Doctoral studies, structured daily studies (compulsory elective course)
• Doctoral studies, structured combined studies (compulsory elective course)