Fundamentals of Semiconductor Technology

Garant předmětu:

Petr Vlčák

Lecturer:

Petr Vlčák

Tutor:

Petr Vlčák

Supervisor:

Department of Physics

Synopsis:

Basic conceptions and ideas. Intrinsic and extrinsic semiconductor. Semiconductor in balance. Current conductivity in homogenous semiconductor-resistivity.Unbalance processes in semiconductors. Minority carrier lifetime. Surface recombination. Mechanism of recombination. Principe of recombination centres. PN junction. Spread of charges - sheer and slowly (linear PN junction). Capacity of PN junction. VA characteristic of PN junction. PN conductivity direction, clousing direction. Diffusion and recombination current. Breakdown of PN junction. Zener´s and avalanche breakdown. Bipolar transistor, unipolar transistor and their characteristics. Surface phenomena in PN junction. Field effect transistor MOS. Frequency characteristics of semiconductor devices. Bulk technology of semiconductors. Device semiconductors technology - alloy, diffusion, planar technology - integral circuites.

Requirements:

Syllabus of lectures:

Syllabus of tutorials:

Study Objective:

Study materials:

Nussbaum : Semiconductor Device Physics, Prentice Hall,1962

Note:

Time-table for winter semester 2022/2023:

Time-table is not available yet

Time-table for summer semester 2022/2023:

Time-table is not available yet

The course is a part of the following study plans: