Pokročilé metody analýzy a optimalizace elektronických obvodů pomocí počítačového návrhu

Garant předmětu:

Josef Dobeš

Přednášející:

Josef Dobeš

Cvičící:

Josef Dobeš

Předmět zajišťuje:

katedra radioelektroniky

Anotace:

The first part of the subject deals with contemporary models of both classical semiconductor elements (in submicron

domain) and special microwave transistors as HBT, pHEMT etc. Moreover, models of power MOS (LDMOS) transistors

are also defined and characterizing the elements by X-parameters is included as well. The modeling part of the subject is

completed by characterization nano-scale elements, including noise models, and by a description of memristors,

memcapacitors and meminductors.

The second part of the subject contains algorithms for solving nonlinear stiff systems of differential-algebraic equations

in implicit form combined with nonstandard sensitivity analysis in time domain. The sensitivity analysis in the frequency

domain is also included as well as nonstandard sensitivity analysis of noise figure. Attention is also given to steady-state

algorithms, in particular, their more difficult form usable for autonomous circuits. The analytic methods are naturally

complemented by single- and multi-objective optimizations. Up to four-dimensional optimizations are demonstrated on

very complicated, but technically useful tasks from the microwave area including power RF amplifiers.

Požadavky:

Osnova přednášek:

1. The concept of the compact modeling. Contemporary models of PN and Schottky diodes based on a subtraction of the

forward and reverse currents.

2. State-of-the-art models of BJTs and JFETs. Modeling the delay of microwave transistors using a second-order Bessel

differential equation, modeling the two-gate JFETs.

3. Contemporary models of MOSFETs, ultra-short-channel models based on scalable EKV and BSIM models, modeling

power LDMOSFETs.

4. Modeling special ultra-high frequency semiconductor devices like HBTs.

5. Modeling other circuit elements with state-of-the-art X parameters.

6. Modeling nano-semiconductor devices and their technology.

7. Noise modeling, especially for high-frequency and nanoscale devices.

8. Modeling the memristors, mem-capacitors and mem-inductors, and their utilization in new breakthrough circuits.

9. Numerical methods for solving implicit STIFF systems of differential-algebraic nonlinear circuit equations.

10. Sensitivity analysis in the frequency and domains, advanced methods of the noise-figure sensitivity analysis.

11. Single-objective optimization, and usage the optimization for extracting the parameters of semiconductor devices.

12. Advanced multi-objective optimization in the frequency and time domains.

13. Special methods for computer-aided design of power circuits (switched ones, etc.).

14. Using CAD for practical design of radio-frequency circuits.

Osnova cvičení:

Cíle studia:

Studijní materiály:

• Muhammad H. Rashid: SPICE for Power Electronics and Electric Power. CRC Press, 2017.

• Krzysztof Iniewski: Nano-Semiconductors: Devices and Technology. CRC Press, 2017.

• Gennady Gildenblat: Compact Modeling. Springer, 2010.

• Matthias Rudolph: Introduction to Modeling HBTs. Artech House, Boston, 2006.

• L.F. Shampine: Numerical Solution of Ordinary Differential Equations. Chapman and Hall/CRC, 2011.

• Brian Kolo: Single & Multiple Objective Optimization. Weatherford Press, 2010

Poznámka:

Rozvrh na zimní semestr 2024/2025:

	06:00–08:0008:00–10:0010:00–12:0012:00–14:0014:00–16:0016:00–18:0018:00–20:0020:00–22:0022:00–24:00
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Út	místnost T2:C3-434 Dobeš J. 09:15–10:45 (přednášková par. 1) Dejvice Laboratoř
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Rozvrh na letní semestr 2024/2025:

Rozvrh není připraven

Předmět je součástí následujících studijních plánů:

• Doktorské studium, prezenční forma (povinně volitelný předmět)
• Doktorské studium, kombinovaná forma (povinně volitelný předmět)