Components of Power Electrical Engineering

The course is a substitute for:

Components of Power Electrical Engineering (X13KVE)

Lecturer:

Tutor:

Supervisor:

Department of Electrotechnology

Synopsis:

Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristiks and parameters, conditions for reliable operation. Pasive components (rezistore, capacitors, inductors). Induction-less connections. Conductors and cables. Overvoltage and ovecurrent protection. Operating reliability of power components and equipments.

Requirements:

A student has to obtain a credit before an examination

Syllabus of lectures:

1.Introduction

2.Basics of semiconductor device fabrication technology

3.Power diodes

4.Power transistors and thyristors

5.Modern thyristor type devices (GTO, IGCT, LTT)

6.Voltage controlled devices (MOSFET, IGBT)

7.Power integration (PIC, IPM)

8.The cooling of power device.

9.Device encapsulations and heat sinks

10.Overvoltage and overcurrent protection

11.Pasive components (rezistors and capacitors)

12.Inductors and conductors

13.Cables

14.Operating reliability of power devices and components

Syllabus of tutorials:

1.Introduction

2.The first group of laboratory tasks - theory and ezpalation

3.The sekond group of laboratory tasks - theory and explanation

4.The third group of laboratory tasks - theory and explanation

5.The fourth group of laboratory tasks - theory and explanation

6.Measuring of temperature dependence of reverse characteristics of thyristors and diodes

7.Measuring of temperature dependence of forward characteristics of thyristors and diodes

8.Measuring of dynamic paprameters during diode reverse recovery process

9.Measuring of static characteristics of BJT, MOSFET a IGBT in dependence on temperature

10.Measuring og dynamec parameters of semiconductor switches

11.Meausring of the trajectory of the operating point during device switching

12.Measuring of pasive devioce parametrs

13.Measuring of transient thermal impedance

14.Closing

Study Objective:

Study materials:

1. Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices.

Chichester: J.Wiley & Sons. 1999

2. Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing

Company.1995

Note:

Further information:

No time-table has been prepared for this course

The course is a part of the following study plans:

• Heavy-current Engineering- structured studies (compulsory course)