Components of Power Electrical Engineering

Prerequisite:

Theory of Electromagnetic Field (X17TEP)
Electrical Circuits 1 (X31EO1)
Electrical Circuits 2 (X31EO2)
Electronics (X34ELE)

Lecturer:

Václav Papež, Vítězslav Benda (gar.)

Tutor:

Václav Papež, Vítězslav Benda (gar.), Filip Cingroš, Jiří Hájek, Tomáš Hron, Pavel Hrzina

Supervisor:

Department of Electrotechnology

Synopsis:

Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristiks and parameters, conditions for reliable operation. Pasive components (rezistore, capacitors, inductors). Induction-less connections. Conductors and cables. Overvoltage and ovecurrent protection. Operating reliability of power components and equipments.

Requirements:

A student has to obtain a credit before an examination

Syllabus of lectures:

1.Introduction

2.Basics of semiconductor device fabrication technology

3.Power diodes

4.Power transistors and thyristors

5.Modern thyristor type devices (GTO, IGCT, LTT)

6.Voltage controlled devices (MOSFET, IGBT)

7.Power integration (PIC, IPM)

8.The cooling of power device.

9.Device encapsulations and heat sinks

10.Overvoltage and overcurrent protection

11.Pasive components (rezistors and capacitors)

12.Inductors and conductors

13.Cables

14.Operating reliability of power devices and components

Syllabus of tutorials:

1.Introduction

2.The first group of laboratory tasks - theory and ezpalation

3.The sekond group of laboratory tasks - theory and explanation

4.The third group of laboratory tasks - theory and explanation

5.Measuring of temperature dependence of reverse characteristics of thyristors and diodes

6.Measuring of temperature dependence of forward characteristics of thyristors and diodes

7.Measuring of dynamic paprameters during diode reverse recovery process

8.Measuring of static characteristics of BJT, MOSFET a IGBT in dependence on temperature

9.Measuring og dynamec parameters of semiconductor switches

10.Meausring of the trajectory of the operating point during device switching

11.Measuring of pasive devioce parametrs

12.Measuring of transient thermal impedance

13.Materiále and construction of components - exhibition

14.Closing

Study Objective:

Study materials:

1. Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices.

Chichester: J.Wiley & Sons. 1999

2. Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing

Company.1995

Note:

Time-table for winter semester 2011/2012:

Time-table is not available yet

Time-table for summer semester 2011/2012:

	06:00–08:0008:00–10:0010:00–12:0012:00–14:0014:00–16:0016:00–18:0018:00–20:0020:00–22:0022:00–24:00
Mon
Tue
Fri	roomT2:E1-3c Papež V. 16:15–17:45 (lecture parallel1) Dejvice haly Laborator L3roomT2:E1-3c Hájek J. Papež V. 18:00–19:30 (lecture parallel1 parallel nr.103) Dejvice haly Laborator L3
Thu
Fri

The course is a part of the following study plans:

• Heavy-current Engineering- structured studies (compulsory course)