Electron Devices

Vztahy:

Podmínkou zápisu na předmět BE5B34ELP je, že student si nejpozději ve stejném semestru zapsal příslušný počet předmětů ze skupiny BEZBM

Garant předmětu:

Pavel Hazdra

Přednášející:

Adam Bouřa, Alexandr Laposa

Cvičící:

Adam Bouřa, Alexandr Laposa

Předmět zajišťuje:

katedra mikroelektroniky

Anotace:

This course introduces the basic theory, principles of operation and properties of electron devices. Physical principles of operation, device structures and characteristics are explained together with adequate models for small- and large-signal. Basic applications in analogue and digital electronics are examined. In seminars and labs, students are introduced to basic principles of device simulation, measurement of device characteristics and extraction of device parameters. Operation of electron devices in electronic devices is then analyzed using the Spice simulator.

Výsledek studentské ankety předmětu je zde: http://www.fel.cvut.cz/anketa/aktualni/courses/AE2B34ELP

Požadavky:

https://moodle.kme.fel.cvut.cz/moodle/login/index.php?lang=cs

100% attendance (re-make of missed exercises during the 14th week), submit processed results of all measurements, successful pass in the tests.

Osnova přednášek:

1. Historical overview, basic electronic circuits. Ideal electron devices (independent and dependent sources, resistors, capacitors and inductors) and their real equivalents, device models and parameters. Materials used in contemporary electronics.

2. Semiconductor basics (crystal and band structure, electrons and holes, charge neutrality, intrinsic and extrinsic semiconductor, acceptors and donors).

3. PN junction, thermal equilibrium, function at forward and reverse bias, Shockley's equation, barrier and diffusion capacitance, breakdown mechanisms, influence of temperature.

4. Diodes' AC characteristics, Linearized model, Reverse recovery effect,

5. Zener diode principles. Applications with the diodes, diode rectifiers, LEDs, Varicap

6. JFET transistor principle, Volt-Ampere characteristics, Linear equivalent model, applications

7. BJT transistor, basic principle, Volt-Ampere characteristics, Linear equivalent model, Application as a small signal amplifier

8. MOSFET amplifier, basic principle, Volt-Ampere characteristics, Linear equivalent model, Application as a small signal amplifier.

9. MOSFET and BJT as a switch, Power switching problematics, Inductive load problematics, clamping diode, snubber, RC protecting circuits, DC/DC conversion principle

10. Operational amplifier, ideal vs. real amplifier, static and dynamic parasitic properties, basic applications as an inverting and noninverting amplifier.

11. Operational amplifiers, powering strategies, symmetrical and single supply powering, advanced applications as a current to voltage converter, voltage to current converter, differential amplifier, instrumentation amplifier

12. Voltage stabilizers with Zener diode, protecting circuits with transils, Regulation stage, Linear regulators.

13. DC/DC converters, Buck, Boost, Buck-Boost converters principle, Efficiency calculation, interference problematics

14. Digital devices, De Morgan laws, logic gates at the transistor levels, combinatorial and sequential logic, memories, microcontrollers

Osnova cvičení:

1. Laboratory regulations, instrumentation and its operation. Security regulations. Electronic circuit and its elements.

2. Introduction to measurement on basic electrical circuits.

3. Diodes' simulation in LTSpice

4. Diodes' Volt-Ampere characteristics measurement and reverse recovery effect measurement

5. Diode rectifier measurement

6. Measurement on JFET amplifier, V-A characteristics, differential parameters, basic amplifiers.

7. Measurement on BJT: V A characteristics and differential parameters.

8. Measurement and analysis of NPN transistor amplifier: gain, input impedance.

9. Measurement of basic circuits with power semiconductor devices (power MOSFET)

10. Measurement of the operational amplifier (amplifiers, comparator with hysteresis, oscillator)

11. Linear regulators measurement

12. Switched regulators measurement

13. Thyristor measurement

14. Finishing missed measurements, issue of grades.

Cíle studia:

Studijní materiály:

[1] P. Horowitz, W. Hill, : The Art of Electronics, Cambridge University Press, New York 2001

[2] S.M. Sze, K.Ng.Kwok: Physics of Semiconductor Devices, Wiley-Interscience, New York 2006

Poznámka:

Další informace:

https://moodle.fel.cvut.cz/enrol/index.php?id=2063

Rozvrh na zimní semestr 2024/2025:

Rozvrh není připraven

Rozvrh na letní semestr 2024/2025:

	06:00–08:0008:00–10:0010:00–12:0012:00–14:0014:00–16:0016:00–18:0018:00–20:0020:00–22:0022:00–24:00
Po
Út
St	místnost T2:B2-s141j Bouřa A. 09:15–10:45 (přednášková par. 1) Dejvice Cvičebna K334místnost T2:B2-s141j Bouřa A. Laposa A. 11:00–12:30 (přednášková par. 1 paralelka 101) Dejvice Cvičebna K334místnost T2:B2-s141j Bouřa A. Laposa A. 12:45–14:15 (přednášková par. 1 paralelka 102) Dejvice Cvičebna K334 místnost T2:B2-s141j Bouřa A. 09:15–10:45 (přednášková par. 1) Dejvice Cvičebna K334
Čt
Pá

Předmět je součástí následujících studijních plánů:

• Electrical Engineering and Computer Science (EECS) (povinný předmět programu)
• Electrical Engineering and Computer Science (EECS) (povinný předmět programu)