Advanced Components of Power Electronic

Lecturer:

Vítězslav Benda (gar.), Václav Papež

Tutor:

Vítězslav Benda (gar.), Filip Cingroš, Pavel Hrzina, Václav Papež

Supervisor:

Department of Electrotechnology

Synopsis:

Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristics and parameters, conditions for reliable operation. Connection of devices in parallel and in series. Operating reliability of power components and equipments.

Requirements:

A student has to obtain a credit before an examination

Syllabus of lectures:

1. Introduction. Physics of basic structures

2. Materials for power devices (Si, SiC, GaN)

3. Power diodes (static and dynamic characteristics)

4. Schottky diodes and combined structures

5. Power transistors and thyristors

6. Modern thyristor type devices (GTO, IGCT, LTT)

7. Power MOSFETs (VDMOS, TMOS, SJMOS)

8. IGBTs. PT and NPT structures.

9. Devices for high frequency operation (LD MOS, HJT)

10.Power integration (PIC, IPM)

11.The cooling of power device.

12.Device encapsulations and heat sinks

13. Device connection in series and in parallel

14.Operating reliability of power devices and components

Syllabus of tutorials:

1.Introduction

2.The first group of laboratory tasks - theory and ezpalation

3.The sekond group of laboratory tasks - theory and explanation

4.The third group of laboratory tasks - theory and explanation

5.Measuring of temperature dependence of reverse characteristics of thyristors and diodes

6.Measuring of temperature dependence of forward characteristics of thyristors and diodes

7.Measuring of dynamic paprameters during diode reverse recovery process

8.Measuring of static characteristics of BJT, MOSFET a IGBT in dependence on temperature

9.Measuring og dynamec parameters of semiconductor switches

10.Meausring of the trajectory of the operating point during device switching

11.Measuring of pasive devioce parametrs

12.Measuring of transient thermal impedance

13.Materiále and construction of components - exhibition

14.Closing

Study Objective:

To give students detail knowledge about structure, functions and basic parameters of power semiconductor devices

Study materials:

1. Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices.

Chichester: J.Wiley & Sons. 1999

2. Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing

Company.1995

Note:

Time-table for winter semester 2011/2012:

Time-table is not available yet

Time-table for summer semester 2011/2012:

	06:00–08:0008:00–10:0010:00–12:0012:00–14:0014:00–16:0016:00–18:0018:00–20:0020:00–22:0022:00–24:00
Mon
Tue	roomT2:E1-2 Benda V. 14:30–16:00 (lecture parallel1) Dejvice haly Laborator L2roomT2:E1-3c Papež V. 16:15–17:45 (lecture parallel1 parallel nr.1) Dejvice haly Laborator L3
Fri
Thu
Fri

The course is a part of the following study plans: