Physics of Semiconductors

Lecturer:

Vítězslav Benda (gar.)

Tutor:

Vítězslav Benda (gar.)

Supervisor:

Department of Electrotechnology

Synopsis:

Basic physical model. Movement of electrons in a crystal lattice, effective

mass, holes. Band structure of the most significant semiconductor materials

Disordersn of crystal lattice. Transport phenomena in semiconductors.

Dependence of transport phenomena on temperature. Transport phenomena in

strong electrical fields. Generation of excess carriers. Nonuniform

semiconductors. PN junction and its properties. Contact metal -

semiconductor. Influence of surface charge on a band structure. Amorphous, micro and single crystaline semiconductors.

Requirements:

Syllabus of lectures:

Syllabus of tutorials:

Study Objective:

Study materials:

Benda, V. - Gowar, J. - Grant, D.: Power Semiconductor Devices. 1. ed. Chichester: John Wiley, 1999., Smith, R.A., Semiconductors, Cambridge University Press, !(&(

Note:

Time-table for winter semester 2011/2012:

Time-table is not available yet

Time-table for summer semester 2011/2012:

Time-table is not available yet

The course is a part of the following study plans:

• Doctoral studies, daily studies (compulsory elective course)
• Doctoral studies, combined studies (compulsory elective course)
• Doctoral studies, structured daily studies (compulsory elective course)
• Doctoral studies, structured combined studies (compulsory elective course)