Power Semiconductor Devices

The course is a substitute for:

Power Semiconductor Systems (D13VPS)

Lecturer:

Tutor:

Supervisor:

Department of Electrotechnology

Synopsis:

Bipolar power semiconductor devices (diodes, transistors, thyristors). Power MOSFET and CoolMOS. IGBT. RF power devices. Schottky diodes. Integrated structures. Hybrid (modules) and monolithic integration (BiCMOS). Structure, function, characteristics, parameters and cooling of power semiconcuctor devices, conditions for its reliable operation. Simulation and design of power semiconductor devices, principles, tools, aspects. Materials for power devices (Si, SiC, GaAs). Basic circuit topologies.

Requirements:

A student has to obtain a credit before an examination

Syllabus of lectures:

1.Introduction. Basic principles.

2.Semiconductors for power devices (Si, GaAs, SiC) and their parameters.

3.Power P-I-N diodes. Application specific fast recovery diodes.

4.Schottky and combined diodes.

5.BJT. Thyristor.

6.Modern thyristor-type devices (GTO, IGCT, LTT).

7.Power MOSFET.

8.Superjunction. CoolMOS.

9.IGBT. PT a NPT structures.

10.Simulation and design of power devices. Principles, tools, aspects.

11.RF power devices - LDMOS, HBT.

12.Power integrated circuits. Hybrid integration - modules (PIC, IPM)

13.Monolithic integration - BiCMOS (SMARTMOS, BCD, etc.).

14.Cooling of power semiconductors and operating load power. Conditions for reliable operation in power converters

Syllabus of tutorials:

1.Introduction

2.Explanation of the first block of laboratory exercises

3.Measurements of power diode and thyristor characteristics (in dependence on temperature)

4.Measurements of dynamic processes during a diode reverse recovery

5.Measurements of BJT, MOSFET and IGBT characteristics (in dependence on temperature)

6.Measurements of switching parameters (a load influence)

7.Measurements of device and heatsink transient thermal impedance

8. Explanation of the second block of laboratory exercises

9. Measurement of switching parameters of the MOSFET.

10.Measurement of switching parameters of CoolMOS.

11.Simulation of P-I-N diode.

12.Simulation of MOSFET.

13.Simulation of IGBT.

14.A credit

Study Objective:

Study materials:

1. Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices. Chichester: J.Wiley & Sons. 1999

2. Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing Company.1995

Note:

Further information:

No time-table has been prepared for this course

The course is a part of the following study plans:

• Electronics - Electronics and Photonics- structured studies (compulsory course)