Electronic Devices and Structures

Lecturer:

Lubor Jirásek (gar.)

Tutor:

Lubor Jirásek (gar.)

Supervisor:

Department of Microelectronics

Synopsis:

The basic equations in semiconductor. Resistivity, mobility, life time, breakdown. The basic elements of electronics: PN junctions, ohmic and Schottky contact., heterojunction, diodes, unipolar transistors, bipolar transistors, passive devices. The physical mechanisms, principles, properties, characteristics, parameters and models of devices. Integrated structures. Analysis of basic circuits, analytic and with SPICE simulations. Basic measurements. Application rules. Noise properties of devices.

Requirements:

Syllabus of lectures:

1. Continuity equations and Poisson equation in semiconductor. Resistivity, mobility, life time.

2. PN junction, heterojunction. Diffusion potential, capacitance, injection, extraction, J-V characteristic.

3. PN junction breakdown, breakdown voltage, properties. Influence of temperature. Diode. SPICE model.

4. Ohmic and Schottky contact. Surface state. Schottky effect. Influence of temperature.

5. Other types of semiconductor diodes. Models.

6. Bipolar transistors. Design, function, parameters and characteristics. HBT.

7. BJT (small and large signal). Frequency response. SPICE models. Influence of temperature. Application rules.

8. BJT in IC. Design, parameters. Current mirror. Active load, output stage.

9. MIS structure. Accumulation, inversion. Threshold voltage, potential well, tunnelling.

10. MOSFET. Models (small and large signal). FAMOS, FLOTOX. EEPROM, FLASH. CCD.

11. Design, parameters and characteristics. Scaling. SPICE models.

12. CMOS. Inverter, current source, active load, differential stage. BiCMOS.

13. Transistors JFET, MESFET, HEMT. Design, parameters and characteristics. SPICE Models.

14. Noise. Types, models, noise properties of devices. Noise rejection methods

Syllabus of tutorials:

1. Semiconductor material properties - calculations.

2. Calculations - Conductivity, generation, recombination. Measurement.

3. Properties of simple semiconductor structures.

4. The simulation of characteristics and properties of diodes using PSPICE.

5. Two terminal devices - calculations using simple models. Measurement of parametres.

6. Bipolar transistors - DC operating point . Conditions and design rules.

7. Bipolar transistors - SPICE models, comparison with measurements.

8. Temperature and supply voltage influence on DC operating point of a bipolar transistor.

9. Unipolar transistors - DC operating point. Conditions and design rules.

10. Unipolar transistors - SPICE models, comparison with measurements.

11. Measurement of frequency characteristics of devices. Comparison with models.

12. Testing of properties of the basic amplifying stage with bipolar transistors.

13. Testing of properties of the basic amplifying stage with unipolar transistors. Final written test.

14. Credit, re-doing of missed measurements

Study Objective:

Study materials:

1. Horowitz, P. - Hill, W.: The Art of Electronics. Cambridge University Press, Cabridge 1980, 89, 90,91,93

2. Sze, S. M.: Physics of Semiconductor Devices. John Wiley & Sons, New York 1981.

3. Floyd, T. L.:Electronic Devices. Macmillan Pub. Comp., New York 1992

4. Bogart, T. F.: Electronic Devices and Circuits. Macmillan Pub. Comp., New York 1993

Note:

Time-table for winter semester 2011/2012:

Time-table is not available yet

Time-table for summer semester 2011/2012:

	06:00–08:0008:00–10:0010:00–12:0012:00–14:0014:00–16:0016:00–18:0018:00–20:0020:00–22:0022:00–24:00
Mon
Tue
Fri
Thu
Fri	roomT2:C4-78 Vaníček F. 13:30–15:15 (lecture parallel1) Dejvice Posluchárna

The course is a part of the following study plans:

• Electronics and Communication Technology - structured studies (compulsory course)