Semiconductor Electronics

The course is a substitute for:

Semiconductor Electronics (34EPO)

Lecturer:

Jan Voves (gar.)

Tutor:

Jan Voves (gar.)

Supervisor:

Department of Microelectronics

Synopsis:

Electronic properties of semiconductors determined by their crystal structure. Transport and statistics of electrons and holes in equilibrium and non-equilibrium. Properties of basic semiconductor structures (PN junction, heterojunction) based on band structure analysis. Systematic derivation of semiconductor devices characteristics (diode, BJT, MOSFET, JFET, laser) with special emphasis on non-ideal effects and extracted circuit models. Essential trends of progress

Requirements:

Presence in labs and seminars, successful final test.

Syllabus of lectures:

1. Crystal structure of semiconductors, crystal defects, phonons.

2. Semiconductor band structure, electron and hole effective mass, density of states.

3. Semiconductor in thermodynamic equilibrium, Fermi level.

4. Carrier transport in semiconductors, electron and hole mobility.

5. Electrons and holes in nonequilibrium. Generation and recombination.

6. PN junction, heterojunctions - two dimensional electron gas, superlattices.

7. Semiconductor diodes, breakdown mechanisms, resonant tunnelling.

8. Bipolar junction transistor, calculation of current amplification, HBT, nonideal effects.

9. Metal - semiconductor junction, modulation doping, JFET, MESFET, HEMT.

10. MOS, ideal and real structure, dielectrics, MOS structure capacitance.

11. MOSFET, nonideal effects, short a narrow channel effects, CCD.

12. Interaction of radiation with semiconductor, optical absorption, photoluminescence.

13. Electroluminescence. Semiconductor lasers.

14. Quantum dots, single electron transport.

Syllabus of tutorials:

1. Basics of quantum mechanics - repetition.

2. Electron in the periodic potential, Kroning-Penney model.

3. Fermi-Dirac and Bose-Einstein statistics - derivation.

4. Boltzmann transport equation, HD, DD models - derivation.

5. Simulation by Monte Carlo method - demonstration.

6. Semiconductor processing - excursion.

7. Electron in the quantum well, tunnelling - Schrodinger equation application.

8. Model levels of semiconductor devices.

9. Showing of physical effects in semiconductors by computer 2D simulation.

10. Measurement of transport properties - HEMT channel mobility.

11. Measurement on the unipolar structure - CV characteristics.

12. Measurement on the semiconductor laser - spectral characteristics.

13. Final written test

14. Final grading

Study Objective:

Study materials:

1. D. A. Naemen: Semiconductor Physics and Devices: Basic Principles, R. D. Irwin 1992

2. M. J. Kelly: Low-Dimensional Semiconductors, Oxford Press 1995

3. U. Cilingiroglu: Systematic Analysis of Bipolar and MOS Transistors, Artech House 1993

Note:

Further information:

No time-table has been prepared for this course

The course is a part of the following study plans:

• Electronics - Electronic Applications- structured studies (compulsory course)
• Electronics - Electronics and Photonics- structured studies (compulsory course)