Advanced Power Semiconductor Devices and ICs

Lecturer:

Jan Vobecký (gar.)

Tutor:

Jan Vobecký (gar.)

Supervisor:

Department of Microelectronics

Synopsis:

Physical and technological structures. Development trends. Parameters and applications. Bipolar structures. MOS structures. BiMOS structures. PN diodes. Schottky diodes. Bipolar transistors. MOS and IGBT transistors. Thyristors (including GTO and MCT). Secondary breakdown, mechanism, safe area. Smart-power devices. High voltage ICs, operation, principles, applications

Requirements:

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Syllabus of lectures:

1. Physical and technological structures

2. Development trends

3. Parameters and applications

4. Bipolar structures

5. MOS structures

6. BiMOS structures

7. PN diodes

8. Schottky diodes

9. Bipolar transistors

10. MOS and IGBT transistors

11. Thyristors (including GTO and GCT)

12. Secondary breakdown, mechanism, SOA

13. Smart-power devices

14. High voltage ICs, operation, principles, applications

Syllabus of tutorials:

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Study Objective:

Study materials:

B. J. Baliga, Power Semiconductor Devices, PWS Publishing Company, 2000

Note:

Time-table for winter semester 2011/2012:

Time-table is not available yet

Time-table for summer semester 2011/2012:

Time-table is not available yet

The course is a part of the following study plans:

• Doctoral studies, daily studies (compulsory elective course)
• Doctoral studies, combined studies (compulsory elective course)
• Doctoral studies, structured daily studies (compulsory elective course)
• Doctoral studies, structured combined studies (compulsory elective course)