Practical Training of Semiconductors

Lecturer:

Tutor:

Jan Aubrecht (gar.), Rudolf Klepáček (gar.), Zdeněk Potůček (gar.)

Supervisor:

Department of Solid State Engineering

Synopsis:

The aim of this practical training is to introduce the students with the fundamentals of semiconductors technology and with practical measurements of basic properties of semiconductor materials and devices.

Requirements:

Graduation of semiconductor physics lecture

Syllabus of lectures:

Syllabus of tutorials:

1. Preparation of semiconductor samples ^^2. Resistivity measurement, van der Pauw methods ^^3. Measurement of lifetime of minority charge carriers ^^4. Measurement of concentration of majority carriers, Hall method ^^5. Measurement of capacity of P-N junction ^^6. Voltage dependence of capacity of P-N junction ^^7. Vacuum sputtering of metals layers ^^8. Preparation of Schottky diode ^^9. Measurement of V-A characteristics of P-N junction and Schottky diode. ^^10. Measurement of contact resistance ^^11.Measurement of deep impurities in semiconductors ^^12. Determination of width forbidden gap ^^13. Determination of V-A characteristics and spectral dependence of response of photoelectrical diode.

Study Objective:

Knowledge:^^Knowledge of fundamental semiconductor physical properties. ^^Skills:^^Ability of individual measurement of semiconductor parameters

Study materials:

Key references: ^^[1]. Semiconductor Theory and Technology, Engineering Summer Conference, Michigan. ^^Recommended references: ^^[2]. M.S.Sze, Kwok Kwok Ng: Physics of Semoconductors Devices, John Wiley and Sons, 2007. ^^Media and tools:^^Laboratory with equipment for measurement of semiconductor materials.

Note:

Time-table for winter semester 2011/2012:

Time-table is not available yet

Time-table for summer semester 2011/2012:

Time-table is not available yet

The course is a part of the following study plans: