Construction of Semiconductor Devices

Lecturer:

Bruno Sopko (gar.)

Tutor:

Supervisor:

Department of Solid State Engineering

Synopsis:

This course should be of interest to engineers who are interested in the developing and production of solid state electronic devices. The main consideration is given to the semiconductor technology and measurement methods. The primary emphasis is given to providing a quantitative knowledge of semiconductor technology which is necessary for an understanding of the operation and fabrication of diodes, transistors and other solid state devices.

Requirements:

Syllabus of lectures:

1. Silicon single-crystal growth, silicon structure ^^2. Types of crystal growth, zone refining ^^3. Preparing of semiconductor wafers ^^4. Diffusion processes, ion implantation ^^5. Epitaxial layers growth, film thickness determination ^^6. Silicon dioxide and nitride growth ^^7. Photolitography ^^8. MOS structures, bipolar and FET transistors ^^9. Monolythic integrated circuits, semiconductor memories ^^10. Semiconductor detectors

Syllabus of tutorials:

Study Objective:

Knowledge: ^^Deeper knowledge of semiconductor materials. ^^Skills: ^^Knowledge of principles of semiconductor components which are used in practical applications.

Study materials:

Key references: ^^[1]. Semiconductor Physics And Devices, Neamen, Tata Mgraw Hill, 2006. ^^Recommended references: ^^[2]. M.S.Sze, Kwok Kwok Ng: Physics of Semoconductors Devices, John Wiley and Sons, 2007.

Note:

Time-table for winter semester 2011/2012:

Time-table is not available yet

Time-table for summer semester 2011/2012:

Time-table is not available yet

The course is a part of the following study plans: