Microelectronics

Lecturer:

Tutor:

Supervisor:

Department of Microelectronics

Synopsis:

Main trends in integrated circuit fabrication. Basic aspects of bipolar and unipolar integrated structures - MOS capacitances, C-U characteristic. Identification of basic CMOS integrated circuit design and fabrication. Some aspects of CMOS IO fabrication. Layout topology and design rules. Integrated circuit design methods. Design of basic CMOS IO blocks. Digital IO design - basic parameters of TTL, ECL, NMOS and CMOS gates. Memories. Bipolar integrated circuits, BiCMOS. Integrated circuit testing.

Requirements:

Syllabus of lectures:

1. Development and trends in microelectronics

2. Integrated circuits, methods of IC design

3. Methods of full-custom and ASIC design

4. Passive and active elements

5. Technological process

6. Technological process

7. Structures of unipolar ICs

8. Structures of bipolar ICs

9. Structures of BiCMOS ICs

10. Layout design, design rules

11. Logic ICs

12. Analogue ICs

13. Semiconductor memories

14. VLSI circuits and systems

Syllabus of tutorials:

1. Introduction to work under UNIX system

2. Introduction to CADENCE design system

3. CMOS design kits

4. Simulation of analogue ICs

5. Characteristics of a CMOS inverter

6. Characteristics of a CMOS transmission gate

7. Parameters of logic gates

8. Simulation of digital ICs

9. Simulation of mixed-mode ICs

10. Design rules

11. Layout design

12. I/O blocks and power-supply on the chip

13. Signal integrity and interference on the chip

14. Final assessment

Study Objective:

Study materials:

[1] Pucknell, D., Eshraghian, K.: Basic VLSI Design. Prentice Hall, 1988

[2] Weste, N., Eshraghian, K.: Principles of CMOS VLSI Design. Add.-Wesley, 1992

Note:

Further information:

No time-table has been prepared for this course

The course is a part of the following study plans: