Electronics

Lecturer:

Tutor:

Supervisor:

Department of Microelectronics

Synopsis:

The course conveys to the students basic knowledge on the properties of semiconductors and their applications for structures of fundamental passive and active electronic devices. It deals with details of device internal structures, physical conditions of their operation and basic characteristics. Teaches the methods of design work with devices, fundamental approaches to calculations of elementary electronic circuits. Deals with the device behavior for small and large analog, digital and optical signals

Requirements:

Syllabus of lectures:

1. Introduction, physics of current conduction in vacuum and in solid state matter

2. The PN junction, energy band diagram, space charges, V-A characteristics

3. Reverse breakdown by avalanche, by Zener eff., tempco, tunnel and Schottky eff.

4. The BJT: basic structure, power amplification principle, structural requirements

5. The BJT: basic connections, equivalent circuits, operating point stabilisation

6. Unipolar devices: JFET, MOSFET. Principles of operation, population inversion

7. Unipolar devices: equivalent circuits, basic connections, oper. point stabilisation

8. Power circuits with BJT's and MOSFET's, classes of operation, efficiency, cooling

9. Multilayer switches: diac, thyristor, triac. Characteristics and applications

10. Optoelectronic devices: radiation sources, detectors, principles of operation

11. Magnetic field-controlled devices: Hall's element, magneto-diode. Applications

12. Temperature-controlled devices: Thermistor, posistor. Principles of operation

13. Vacuum devices: types of electron emission, comparison to semiconduc. devices

14. Special devices: microwave tubes, display devices, passive components

Syllabus of tutorials:

1. Introduction: lab. and security regulations, getting acquainted with instrument

2. Tutorial: semigraphical methods of solution of circuits with PN and Zener diodes

3. Measurements of PN, Schottky and light emitting diodes, characteristics, tempco

4. Measurement of basic application circuits with PN diodes - rectifiers

5. Tutorial: semigraphical methods of solution of BJT circuits, operating point

6. BJT's: V-A characteristics, operating point setting, LEC parameter values

7. BJT's: properties of basic CE, CC, CB connections, input/output impedances

8. JFET's: V-A characteristics, basic amplifier connection, LEC parameter values

9. MOSFET power switch: DC-DC converter, polarity inverter

10. Analogue BJT power amplifiers: operating classes, linearity, efficiency

11. Multilayer switching devices: application of a phase-regulated thyristor

12. Measurement of optoelectronic devices: photodiode,-transistor,-resistor,-isolator

13. Measurement of controlled devices: Hall sensor, thermistor. Final written test

14. Final grading, re-doing of missed measurements

Study Objective:

Study materials:

[1] Bar, Lev: Semiconductors and Electronic Devices. Prentice-Hall, New York 1979

Note:

Further information:

No time-table has been prepared for this course

The course is a part of the following study plans: