TCAD for Electronics

Lecturer:

Tutor:

Supervisor:

Department of Microelectronics

Synopsis:

Aplication of TCAD (Technology Computer Aided Design) in analysis and design of basic electron devices. Simulation principle of technology processes and simulation of dc and dynamic behaviour of devices. Basic models and their application. Training on SUN workstations in standard environmment (ATHENA and ATLAS from SILVACO) in the frame of simulation of basic semiconductor devices.

Requirements:

Syllabus of lectures:

1. TCAD, basic principles, available tools, application capabilities

2. Device simulation. ATLAS. Basic semiconductor equations and models

3. Poisson and continuity equations. Drift-diffusion approximation

4. Generation and recombination. SRH model. Lifetime. Practical aspects

5. Auger, optical, and surface recombination. Models of carrier tunnel - EEPROM

6. Avalanche breakdown. Impact ionization. Carrier mobility, bandgap narrowing

7. Boundary conditions. Ohmic and Schottky contact. Semiconductor-insulator

8. Heat flow equation (GIGA). Thermal management in devices

9. Mixed mode simulation in ATLAS (MIXEMOED), optodev (BLAZE LUMINOUS)

10. Models of transport properties of semiconductors

11. Numerical methods in TCAD. Principles, implementation, practical aspects

12. Process simulation. ATHENA. Basic principles and application capabilities

13. Ion implantation. Basic models and their application

14. Diffusion, oxidation. Basic models and their application

Syllabus of tutorials:

1. SUN platform and UNIX. Simulation environment DECKBUILD - introduction

2. PN junction diode. Input deck for simulation. Debugging

3. Simulation of dc and transient (reverse recovery) diode characteristics

4. Design of input deck - training. Analysis of results, discussion

5. BJT. Input deck for dc simulation (I-V curves) debugging

6. Strategy of BJT design in the frame of device simulation

7. Project I - design of BJT simulation. Breakdown voltage, current amplific. factor

8. Project I - debugging of BJT simulation. Analysis of results, discussion

9. MOSFET simulation. Input deck for dc characteristics. Debugging

10. Project II. Design of MOSFET simulation. Threshold and breakdown voltage

11. Strategy of MOSFET design in the frame of device simulation

12. Project II - simulation of MOSFET. Analysis of results, discussion

13. Preparation of projects for presentation. Processing of results

14. Presentation of individual projects. Acknowledgement

Study Objective:

Study materials:

[1] Selberherr, S.: Analysis and Simulation of Semiconductor Devices. Springer Verlag, Wien 1984

[2] ATLAS User's Manual. SILVACO Int., Santa Clara 1997

[3] ATHENA User's Manual. SILVACO Int., Santa Clara 1997

Note:

Further information:

No time-table has been prepared for this course

The course is a part of the following study plans:

• Elektronika-inženýrský blok (compulsory elective course)
• Elektronika-inženýrský blok (compulsory elective course)