Electronic Devices
Code | Completion | Credits | Range | Language |
---|---|---|---|---|
34ES | Z,ZK | 7 | 3+3s | Czech |
- The course cannot be taken simultaneously with:
- Electronic and Microelectronic Devices (E34EMS)
- Lecturer:
- Tutor:
- Supervisor:
- Department of Microelectronics
- Synopsis:
-
The basic equations in semiconductor. Resistivity, mobility, life time, breakdown. The basic elements of electronics: PN junctions, ohmic and Schottky contact., heterojunction, diodes, unipolar transistors, bipolar transistors, passive devices. The physical mechanisms, principles, properties, characteristics, parameters and models of devices. Integrated structures. Analysis of basic circuits, analytic and with SPICE simulations. Basic measurements. Application rules. Noise properties of devices.
- Requirements:
- Syllabus of lectures:
-
1. Properties of semiconductors. Energy - band diagrams. Transport effects
2. PN junction under thermodynamic equilibrium, polarisation, Shockley relation
3. Other types of junctions
4. Semiconductor diodes, microwave range diodes
5. JFET, MESFET. Principles, operating modes, properties, models
6. MIS structure. MOS transistors, types, operating modes, models
7. Bipolar transistors. Transistor effect. Characteristics
8. Models and applications of BJT. Influence of temperature, stabilisation
9. High frequency behaviour of BJT. Cut-off frequency
10. Basic elements of integrated circuits. Structures, properties
11. Switching devices. Principles, characteristics, dynam. behaviour
12. Optoelectronic components. Photodetectors, LED, laser diode
13. Vacuum tubes for different frequency band, power types
14. Noise mechanisms, noise models of electronics elements
- Syllabus of tutorials:
-
1. Introduction
2. Using PSPICE programme. Simulation of bipolar transistor characteristics
3. Simulation of unipolar transistor characteristics
4. Tutored individual work. PSPICE
5. Two terminator devices. Simple models
6. Unipolar transistors
7. Bipolar transistors
8. Properties of optoelectronic devices
9. Measurements of statical parameters of unipolar transistors
10. Measurements of properties of CMOS invertors
11. Temper. and supply voltage influence on DC operating point of a bipol.transistor
12. Bipolar transistors
13. Measurement of properties of basic amplifiers with bipolar transistors
14. Final grading
- Study Objective:
- Study materials:
-
[1] Singh, I.: Semiconductor Devices. Mc.Graw - Hill, New York 1994
[2] Horowitz, P., Hill, W.: The Art of Electronics. Cambridge University Press, 1990
- Note:
- Further information:
- No time-table has been prepared for this course
- The course is a part of the following study plans:
-
- Elektronika a sdělovací technika-bakalářský blok (compulsory course)
- Elektronika a sdělovací technika-bakalářský blok (compulsory course)