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CZECH TECHNICAL UNIVERSITY IN PRAGUE
STUDY PLANS
2011/2012

Electronic Devices

The course is not on the list Without time-table
Code Completion Credits Range Language
34ES Z,ZK 7 3+3s Czech
The course cannot be taken simultaneously with:
Electronic and Microelectronic Devices (E34EMS)
Lecturer:
Tutor:
Supervisor:
Department of Microelectronics
Synopsis:

The basic equations in semiconductor. Resistivity, mobility, life time, breakdown. The basic elements of electronics: PN junctions, ohmic and Schottky contact., heterojunction, diodes, unipolar transistors, bipolar transistors, passive devices. The physical mechanisms, principles, properties, characteristics, parameters and models of devices. Integrated structures. Analysis of basic circuits, analytic and with SPICE simulations. Basic measurements. Application rules. Noise properties of devices.

Requirements:
Syllabus of lectures:

1. Properties of semiconductors. Energy - band diagrams. Transport effects

2. PN junction under thermodynamic equilibrium, polarisation, Shockley relation

3. Other types of junctions

4. Semiconductor diodes, microwave range diodes

5. JFET, MESFET. Principles, operating modes, properties, models

6. MIS structure. MOS transistors, types, operating modes, models

7. Bipolar transistors. Transistor effect. Characteristics

8. Models and applications of BJT. Influence of temperature, stabilisation

9. High frequency behaviour of BJT. Cut-off frequency

10. Basic elements of integrated circuits. Structures, properties

11. Switching devices. Principles, characteristics, dynam. behaviour

12. Optoelectronic components. Photodetectors, LED, laser diode

13. Vacuum tubes for different frequency band, power types

14. Noise mechanisms, noise models of electronics elements

Syllabus of tutorials:

1. Introduction

2. Using PSPICE programme. Simulation of bipolar transistor characteristics

3. Simulation of unipolar transistor characteristics

4. Tutored individual work. PSPICE

5. Two terminator devices. Simple models

6. Unipolar transistors

7. Bipolar transistors

8. Properties of optoelectronic devices

9. Measurements of statical parameters of unipolar transistors

10. Measurements of properties of CMOS invertors

11. Temper. and supply voltage influence on DC operating point of a bipol.transistor

12. Bipolar transistors

13. Measurement of properties of basic amplifiers with bipolar transistors

14. Final grading

Study Objective:
Study materials:

[1] Singh, I.: Semiconductor Devices. Mc.Graw - Hill, New York 1994

[2] Horowitz, P., Hill, W.: The Art of Electronics. Cambridge University Press, 1990

Note:
Further information:
No time-table has been prepared for this course
The course is a part of the following study plans:
Generated on 2012-7-9
For updated information see http://bilakniha.cvut.cz/en/predmet11005804.html