- Department of Microelectronics
The course introduces into the problematic of power electronics. First part of lectures deals with principles and structures of contemporary semiconductor power devices. The impact of novel semiconductor materials is discussed, as well. Circuit models of particular devices will be then explained, driving circuits, switching of the resistive, inductive and capacitive loads, power losses and device operation reliability will be thoroughly discussed. Second part of lectures is dedicated to the problematic of power converters, their topologies, control techniques and circuits. Electromagnetic compatibility and PCB design for power converters will be discussed, as well.
Attendance at exercises, successful pass in the final test and examination.
- Syllabus of lectures:
1. Introduction to power electronics, Physical principles, Semiconductor materials (Si, SiC, GaN. etc.)
2. Power diodes: rectyfiyng and fast-recovery diode. Silicon versus Silicon Carbide.
3. MOSFETs and IGBTs. Comparison of structures and properties.
4. Thyristors: Phase Controlled Thyristors (PCT), Gate Turn-Off and Integrated Gate-Commutated Thyristors (GTO, IGCT).
5. Power modules, integrated structures and circuits.
6. Compact models of power devices and basic circuits elements.
7. Driving power electronics switching devices, parasitic capacitance and leakage inductance.
8. Switching resistive, inductive and capacitive loads, HSS, LSS and bridge configuration.
9. Power dissipation and thermal resistance.
10. Operating reliability of power devices.
11. Power converter topologies (VSI, LCI, MMC)
12. Introduction to power converters control techniques
13. Control circuits for power converters, load regulation
14. PCB guidelines for power converters
- Syllabus of tutorials:
1. Laboratory and security regulations. Introduction into power electronics.
2. Static and dynamic properties of power diodes.
3. Static and dynamic properties of field controlled power devices.
4. Static and dynamic properties of bipolar and multijunction power devices.
5. Silicon, Silicon Carbide, Gallium Nitride power devices, comparison of properties.
6. Circuit simulation of power devices and basic circuit elements
7. Simulation of control circuits for power converters
8. HSS, LSS and bridge configuration
9. Thermal calculation and design basics
10. Power circuit design example with focus on reliability
11. Design of power converter, efficiency and reliability
12. Topologies: Step-Up, Step-Down, SEPIC, Flyback, Forward.
13. Semiconductors laser and diode driver circuits, load and motor speed regulation
14. PCB design example of SMPS
- Study Objective:
- Study materials:
 B. Jayant Baliga : „Fundamentals of Power Semiconductor Devices“, Springer, 2008
 R. Perret, „Power Electronics Semiconductor Devices“, John Wiley, 2010
 A. Ioinovici, „Power Electronics and Energy Conversion Systems“, Wiley, 2012
- Further information:
- No time-table has been prepared for this course
- The course is a part of the following study plans:
- Electronics and Communications - Communication Systems and Networks (elective course)
- Electronics and Communications - Radio and Optical technology (elective course)
- Electronics and Communications - Electronics (compulsory elective course)
- Electronics and Communications - Audiovisual Technology and Signal processing (elective course)