Logo ČVUT
CZECH TECHNICAL UNIVERSITY IN PRAGUE
STUDY PLANS
2019/2020

Semiconductor Electronics

The course is not on the list Without time-table
Code Completion Credits Range Language
QB-EPV Z,ZK 4 2P+2C Czech
Lecturer:
Tutor:
Supervisor:
Department of Microelectronics
Synopsis:

Electronic properties of semiconductors determined by their

crystal structure. Transport and statistics of electrons

and holes in equilibrium and non-equilibrium. Properties of

basic semiconductor structures (PN junction, heterojunction

based on band structure analysis. Systematic derivation of

semiconductor devices characteristics (diode, BJT, MOSFET,

JFET, laser) with special emphasis on non-ideal effects and

extracted circuit models. Essential trends of progress

Requirements:

Presence in labs and seminars, successful final test.

Syllabus of lectures:

1. Crystal structure of semiconductors, crystal defects,

phonons.

2. Semiconductor band structure, electron and hole

effective mass, density of states.

3. Semiconductor in thermodynamic equilibrium, Fermi level.

4. Carrier transport in semiconductors, electron and hole

mobility.

5. Electrons and holes in nonequilibrium. Generation and

recombination.

6. PN junction, heterojunctions - two dimensional electron

gas, superlattices.

7. Semiconductor diodes, breakdown mechanisms, resonant

tunnelling.

8. Bipolar junction transistor, calculation of current

amplification, HBT, nonideal effects.

9. Metal - semiconductor junction, modulation doping, JFET,

MESFET, HEMT.

10. MOS, ideal and real structure, dielectrics, MOS

structure capacitance.

11. MOSFET, nonideal effects, short a narrow channel

effects, CCD.

12. Interaction of radiation with semiconductor, optical

absorption, photoluminescence.

13. Electroluminescence. Semiconductor lasers.

14. Quantum dots, single electron transport.

Syllabus of tutorials:

1. Basics of quantum mechanics - repetition.

2. Electron in the periodic potential, Kroning-Penney model

3. Fermi-Dirac and Bose-Einstein statistics - derivation.

4. Boltzmann transport equation, HD, DD models - derivation

5. Simulation by Monte Carlo method - demonstration.

6. Semiconductor processing - excursion.

7. Electron in the quantum well, tunnelling - Schrodinger

equation application.

8. Model levels of semiconductor devices.

9. Showing of physical effects in semiconductors by

computer 2D simulation.

10. Measurement of transport properties - HEMT channel

mobility.

11. Measurement on the unipolar structure - CV

characteristics.

12. Measurement on the semiconductor laser - spectral

characteristics.

13. Final written test

14. Final grading

Study Objective:
Study materials:

1. D. A. Naemen: Semiconductor Physics and Devices: Basic

Principles, R. D. Irwin 1992

2. M. J. Kelly: Low-Dimensional Semiconductors, Oxford

Press 1995

3. U. Cilingiroglu: Systematic Analysis of Bipolar and MOS

Transistors, Artech House 1993

Note:
Further information:
No time-table has been prepared for this course
The course is a part of the following study plans:
Data valid to 2020-01-29
For updated information see http://bilakniha.cvut.cz/en/predmet1723006.html