Logo ČVUT
CZECH TECHNICAL UNIVERSITY IN PRAGUE
STUDY PLANS
2020/2021

Advanced Power Semiconductor Devices and ICs

Login to KOS for course enrollment Display time-table
Code Completion Credits Range Language
XP34APD ZK 4 2P+2C Czech
Lecturer:
Jan Vobecký (guarantor)
Tutor:
Jan Vobecký (guarantor)
Supervisor:
Department of Microelectronics
Synopsis:

Physical and technological structures. Development trends. Parameters and applications. Bipolar structures. MOS structures. BiMOS structures. PN diodes. Schottky diodes. Bipolar transistors. MOS and IGBT transistors. Thyristors (including GTO and MCT). Secondary breakdown, mechanism, safe area. Smart-power devices. High voltage ICs, operation, principles, applications

Requirements:

-

Syllabus of lectures:

1. Physical and technological structures

2. Development trends

3. Parameters and applications

4. Bipolar structures

5. MOS structures

6. BiMOS structures

7. PN diodes

8. Schottky diodes

9. Bipolar transistors

10. MOS and IGBT transistors

11. Thyristors (including GTO and GCT)

12. Secondary breakdown, mechanism, SOA

13. Smart-power devices

14. High voltage ICs, operation, principles, applications

Syllabus of tutorials:

n

Study Objective:
Study materials:

B. J. Baliga, Power Semiconductor Devices, PWS Publishing Company, 2000

Note:
Further information:
https://moodle.fel.cvut.cz/course/view.php?id=3730
Time-table for winter semester 2020/2021:
Time-table is not available yet
Time-table for summer semester 2020/2021:
Time-table is not available yet
The course is a part of the following study plans:
Data valid to 2020-09-25
For updated information see http://bilakniha.cvut.cz/en/predmet11433204.html