Logo ČVUT
Loading...
CZECH TECHNICAL UNIVERSITY IN PRAGUE
STUDY PLANS
2011/2012

Application of Semiconductor Power Devices

The course is not on the list Without time-table
Code Completion Credits Range Language
XD34AVS Z,ZK 4 14+4s Czech
Lecturer:
Lubor Jirásek (gar.)
Tutor:
Lubor Jirásek (gar.)
Supervisor:
Department of Microelectronics
Synopsis:

Static and dynamic processes of power structures in forward, blocking and reverse mode of operation. Power diodes, bipolar junction transistors, thyristors, field controlled power devices, HF and HV devices, power ICs, characteristics and features. Packaging. Loading and overloading. Device surge protective circuits in varied applications.. Principles of application in power circuits, basic trigger and application circuits. Cooling. Cooler design. Catalogue data work information.

Requirements:
Syllabus of lectures:

1. Types of semiconductor power devices, area of parameters, overwiev of applic.

2. Carrier transport and breakdown voltage in semiconductor power devices.

3. Basic structure function in semiconduct. power devices. Application consequence

4. Power diode, types, structures, properties, applications.

5. Power bipolar junction transistor, structure, types, properties, applications.

6. Thyristors, special thyristor, characteristics and features, structure, properties, applications.

7. GTO. Structure, properties, driver application rules.

8. Field controlled devices advantages and disadvantages. Facilities of application.

9. Specific rules for application of field effect semiconductor power devices.

10. New power devices, power heterostructures, PIC, SMART PIC. Applications.

11. Packaging.Service life and operational reliability of semiconductor power devices

12. SOA. Loading, peak loading and overloading. Application rules.

13. Cooling. Cooler design. Catalogue data work informations.

14. Device surge protection circuits in varied applications.

Syllabus of tutorials:

1. Basic properties of semiconductors

2. Basic properties of semiconductor power structures

3. Collector-emitter breakdown voltage in bipolar transistor

4. Simulation of simple structures on PC

5. Measurement of a (dUD/dt)crit of thyristors

6. Measurement of a GTO

7. Measurement of a triacs

8. Measurement of an IGBT

9. Measurement of a HEXFET

10. Measurement of HEXFET drivers

11. Measurement of a power regulation

12. Loading and overloading. Surge protective circuits

13. Cooler design

14. Measurement of an heatsink properties

Study Objective:
Study materials:

1. Baliga, B. J.: Modern Power Devices. Wiley, New York 1985.

2. Ghandi, S. K.: Semiconductor Power Devices. Wiley, New York 1981.

Note:
Further information:
No time-table has been prepared for this course
The course is a part of the following study plans:
Generated on 2012-7-9
For updated information see http://bilakniha.cvut.cz/en/predmet11655404.html